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| Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation GENERAL DESCRIPTION Passivated guaranteed commutation triacs in a plastic envelope suitable for surface mounting, intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers. BTA216B series D, E and F QUICK REFERENCE DATA SYMBOL PARAMETER BTA216BBTA216BBTA216BRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 600D 600E 600F 600 16 140 UNIT VDRM IT(RMS) ITSM V A A PINNING - SOT404 PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2 PIN CONFIGURATION mb SYMBOL T2 2 1 3 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb 99 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s CONDITIONS MIN. MAX. 6001 16 UNIT V A - I2t dIT/dt IGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate power Average gate power Storage temperature Operating junction temperature 140 150 98 100 2 5 0.5 150 125 A A A2s A/s A W W C C over any 20 ms period -40 - 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. April 2002 1 Rev 2.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS BTA216B series D, E and F MIN. - TYP. 55 MAX. 1.2 1.7 - UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance minimum footprint, FR4 board junction to ambient STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current 2 CONDITIONS BTA216BVD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A IT = 20 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C MIN. ...D 0.25 5 5 5 15 25 25 15 MAX. ...E 10 10 10 25 30 30 25 ...D, E, F 1.5 1.5 0.5 ...F 25 25 25 30 40 40 30 UNIT mA mA mA mA mA mA mA V V V mA IL Latching current IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt dIcom/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating current Critical rate of change of commutating current CONDITIONS BTA216BVDM = 67% VDRM(max); Tj = 110 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 C; IT(RMS) = 16 A; dVcom/dt = 10V/s; gate open circuit VDM = 400 V; Tj = 125 C; IT(RMS) = 16 A; dVcom/dt = 0.1V/s; gate open circuit ...D 30 2.5 MIN. ...E 60 6.2 ...F 70 18 V/s A/ms MAX. UNIT dIcom/dt 12 20 50 - A/ms 2 Device does not trigger in the T2-, G+ quadrant. April 2002 2 Rev 2.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA216B series D, E and F 25 Ptot / W Tmb(max) / C = 180 95 20 IT(RMS) / A BT139 20 1 120 90 101 99 C 15 15 60 30 107 10 113 10 5 119 5 0 0 5 10 IT(RMS) / A 15 125 20 0 -50 0 50 Tmb / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle. ITSM / A Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. IT(RMS) / A 1000 50 40 dI T /dt limit 100 30 20 IT T 10 10us I TSM time 10 Tj initial = 25 C max 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms. ITSM / A IT T 100 ITSM time Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 99C. VGT(Tj) VGT(25 C) 150 1.6 1.4 1.2 1 Tj initial = 25 C max 50 0.8 0.6 0 1 10 100 Number of cycles at 50Hz 1000 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. April 2002 3 Rev 2.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA216B series D, E and F IGT(Tj) IGT(25C) 3 T2+ G+ T2+ GT2- G- 50 IT / A Tj = 125 C Tj = 25 C BT139 2.5 40 typ Vo = 1.195 V Rs = 0.018 Ohms max 2 30 1.5 20 1 0.5 10 0 -50 0 0 Tj/C 50 100 150 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 10 Zth j-mb (K/W) 3 2.5 2 1.5 1 1 unidirectional bidirectional 0.1 P D tp 0.01 0.5 0 -50 0.001 10us 0.1ms 1ms 10ms tp / s 0.1s 1s t 0 50 Tj / C 100 150 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. IH(Tj) IH(25C) Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. dIcom/dt (A/ms) 100 F TYPE E TYPE D TYPE 3 2.5 2 10 1.5 1 0.5 0 -50 1 0 50 Tj / C 100 150 20 40 60 80 Tj/C 100 120 140 Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. Fig.12. Mimimum, critical rate of change of commutating current dIcom/dt versus junction temperature, dVcom/dt = 10V/s. April 2002 4 Rev 2.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 max BTA216B series D, E and F 4.5 max 1.4 max 11 max 15.4 2.5 0.85 max (x2) 2.54 (x2) 0.5 Fig.13. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.14. SOT404 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". April 2002 5 Rev 2.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA216B series D, E and F DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS3 Objective data PRODUCT STATUS4 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Preliminary data Qualification Product data Production Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 3 Please consult the most recently issued datasheet before initiating or completing a design. 4 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. April 2002 6 Rev 2.000 |
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